Abstract
To provide a high EMI resisting Local Interconnection Network (LIN) transmitter, a novel structure with an error feedback amplifier composed of low input impedance transconductance amplifier was proposed. The circuit was fabricated in 0.5 µm 60 V BCD process and was simulated hiring the standard IEC62132-4: Direct Power Injection (DPI) method. Simulation result showed that the performance of the duty cycle satisfied the requirement under the condition of superimposing more than 5 W Electromagnetic interference (EMI) ranged from 150 KHz to 1 GHz onto LIN bus.
