IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
5 V input level shifter circuit for IGZO thin-film transistors
HongKyun LymHwanSool OhJaeEun PiChi-Sung HwangSangHee Ko ParkKeeChan Park
Author information
JOURNAL FREE ACCESS

2014 Volume 11 Issue 13 Pages 20140539

Details
Abstract

A 5 V input level shifter circuit based on depletion-mode In-Ga-Zn-O thin-film transistors (TFT) worked up to 100 kHz. By employing metal-insulator-semiconductor (MIS) active capacitor, we enhanced the bootstrapping effect and reduced the rise time of the output signal. SPICE simulation results showed that the proposed level shifter worked for wide threshold voltage range from −2 V to +1 V and the fabricated circuit exhibited the propagation delay tplh and tphl of 0.6 µsec and 0.3 µsec respectively.

Content from these authors
© 2014 by The Institute of Electronics, Information and Communication Engineers
Previous article
feedback
Top