Abstract
InGaAs is a promising material that can replace the current Si nMOSFET in CMOS because of its high electron mobility. To realize a high drain current density at a low supply voltage in InGaAs, the introduction of a heavily doped source is essential. We introduced an epitaxially grown n-InP source and obtained a high drain current density. However, short-channel effects were observed in a previous study; thus, we introduced extremely-thin-body III–V–OI InGaAs MOSFETs on a Si substrate. Accounting for the channel-thickness dependence, a drain current density of 2.04 A/mm at VD = 0.5 V and clear suppression of the short-channel effects were observed for a channel thickness of 10 nm.
