Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure

Shigeru Kanazawa; Toshio Ito; Tomonari Sato; Ryuzo Iga; Wataru Kobayashi; Kiyoto Takahata; Hiroaki Sanjoh; Hiroyuki Ishii

doi:10.1587/elex.11.20141028

LETTER

Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure

Shigeru Kanazawa, Toshio Ito, Tomonari Sato, Ryuzo Iga, Wataru Kobayashi, Kiyoto Takahata, Hiroaki Sanjoh, Hiroyuki Ishii

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Keywords: DML, flip-chip, 100GbE

JOURNAL FREE ACCESS

2015 Volume 12 Issue 1 Pages 20141028

DOI https://doi.org/10.1587/elex.11.20141028

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Abstract

The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.

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