IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
Volume 12 , Issue 1
Showing 1-8 articles out of 8 articles from the selected issue
LETTER
  • Type: FOREWORD
    2015 Volume 12 Issue 1 Pages 20159001
    Published: 2015
    Released: January 10, 2015
    JOURNALS FREE ACCESS
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  • Sadegh Abbasian, Thomas Johnson
    Type: LETTER
    Subject area: Microwave and millimeter wave devices, circuits, and systems
    2015 Volume 12 Issue 1 Pages 20140952
    Published: 2015
    Released: January 10, 2015
    [Advance publication] Released: December 12, 2014
    JOURNALS FREE ACCESS
    In this paper, experimental results are shown for a synchronous class-F RF to DC rectifier. The rectifier design is obtained by transforming a class-F amplifier into a rectifier using the theory of time reversal duality. The amplifier and rectifier are tested under identical source power conditions to demonstrate the duality between the circuits. A 10 W Cree HEMT device is used in the designs at a frequency of 985 MHz. The class-F amplifier delivers 8.3 W with an efficiency of 77.5% for a DC source power of 10.7 W. The time reversed dual, a class-F rectifier, delivers 8.7 W of DC load power for a RF input source power of 10.7 W with an efficiency of 81.3%. The rectifier circuit has slightly higher efficiency than the amplifier and lower losses in the rectifier are attributed to device operation in both quadrants I and III compared to an amplifier which operates exclusively in quadrant I. The rectifier has a peak output power of 11.3 W with an efficiency of 78% and this is the highest reported power for a synchronous RF class-F amplifier.
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  • Shigeru Kanazawa, Toshio Ito, Tomonari Sato, Ryuzo Iga, Wataru Kobayas ...
    Type: LETTER
    Subject area: Optoelectronics, Lasers and quantum electronics, Ultrafast optics, Silicon photonics, Planar lightwave circuits
    2015 Volume 12 Issue 1 Pages 20141028
    Published: 2015
    Released: January 10, 2015
    [Advance publication] Released: December 19, 2014
    JOURNALS FREE ACCESS
    The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.
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  • Lei Li, Hai Yan, Peng Yang, Jianhao Hu
    Type: LETTER
    Subject area: Integrated circuits
    2015 Volume 12 Issue 1 Pages 20141054
    Published: 2015
    Released: January 10, 2015
    [Advance publication] Released: December 19, 2014
    JOURNALS FREE ACCESS
    In this express, an optimized architecture for modulo (2n − 2p + 1) multipliers on the condition n ≥ 2p is proposed. Compared with the state-of-art, synthesized results demonstrate that the proposed multipliers can achieve an average delay savings of about 7.5% with an average area savings of about 1.4%.
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  • Daisuke Okamoto, Takeshi Akagawa, Tatsuya Usuki, Junichi Fujikata, Sug ...
    Type: LETTER
    Subject area: Optoelectronics, Lasers and quantum electronics, Ultrafast optics, Silicon photonics, Planar lightwave circuits
    2015 Volume 12 Issue 1 Pages 20141084
    Published: 2015
    Released: January 10, 2015
    [Advance publication] Released: December 19, 2014
    JOURNALS FREE ACCESS
    We analyzed the bit error rate of optical data links in a silicon optical interposer using an equivalent-circuit model. Both optical and electrical signals can be simultaneously simulated in a circuit model where optical signals are expressed as equivalent currents. The modeled silicon optical interposer consisted of a laser diode, an optical modulator, an optical waveguide, and a photodiode. The electrical parameters of the devices were obtained from experimental results. The calculated 12.5-Gbps eye diagram and minimum sensitivity of −5.6 dBm were consistent with the experimental results.
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  • Dong-Joon Lee, Young-Seob Lee, Jae-Yong Kwon, Jae Kap Jung
    Type: LETTER
    Subject area: Fiber optics, Microwave photonics, Optical interconnection, Photonic signal processing, Photonic integration and systems
    2015 Volume 12 Issue 1 Pages 20141090
    Published: 2015
    Released: January 10, 2015
    [Advance publication] Released: December 19, 2014
    JOURNALS FREE ACCESS
    This paper presents a quite simple and efficient optical transformer system for high-voltage measurements. Compact and concise electro-optic sensors measure intense electric fields emitted from 50 kV of a spherical surface. We present two distinct types of optical sensors, one suitable for contacting and the other suitable for non-contacting sensing geometry. The properties of each sensor, including the design, operation principle, linearity and sensitivity, for intense electrical signals are discussed. The voltage sensing capability of the proposed optical transformer, from the measured electric fields, was evaluated and calibrated in a field simulation based on a finite element method and by a commercial potential transformer.
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  • Young-il Park, Reem Song, Myun-joo Park, Byung-sung Kim, Munkyo Seo
    Type: LETTER
    Subject area: Microwave and millimeter wave devices, circuits, and systems
    2015 Volume 12 Issue 1 Pages 20141091
    Published: 2015
    Released: January 10, 2015
    [Advance publication] Released: December 19, 2014
    JOURNALS FREE ACCESS
    A simple four-element monopole array antenna is presented for four-way electronic beam steering. All four identical elements operate as a radiator or reflectors through the centre fed coplanar waveguide feeding network with an offset switching structure. This enables the easy optimization for gain, front to back ratio and the input return loss. The designed antenna shows the measured return loss below −14 dB in 2.35 GHz–2.55 GHz band and the 5.7 dBi gain with the front to back ratio (FBR) of 11 dB.
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  • Zhenxing Yu, Jun Feng, Yu Guo, Zhiqun Li
    Type: LETTER
    Subject area: Integrated circuits
    2015 Volume 12 Issue 1 Pages 20141097
    Published: 2015
    Released: January 10, 2015
    [Advance publication] Released: December 12, 2014
    JOURNALS FREE ACCESS
    A V-band low-noise amplifier with the gain boosting and noise reduction technique in 90 nm LP CMOS is implemented and tested in this paper. The operation principles of the two techniques are analyzed in detail. The fabricated LNA has a peak gain of 19.8 dB, 3-dB bandwidth of 10.5 GHz and NF of 5.86 dB at 61.5 GHz. Additionally, the reverse isolation of this LNA is better than 50 dB at all frequency. The input and output return losses are both below −10 dB in the China’s 60 GHz unlicensed band (59–64 GHz). The total chip size is 0.36 mm2 including testing pads.
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