Effects of coaxial through-silicon via on carrier mobility along [100] and [110] crystal directions of (100) silicon

抄録

This letter investigates the effects of coaxial through-silicon via (TSV) on carrier motilities in the channels of nMOS and pMOS with channels along [100] and [110] orientations on (100) silicon. The keep-out zone (KOZ) induced by coaxial TSV and the effective area occupied by TSV and surrounding KOZ are evaluated. The results show that, the effective area is reduced by ∼92% by aligning the channels of pMOS along [100] orientation and nMOS along [110] orientation than the opposite orientations. The absolute error ranges from −12.5 µm to 7.2 µm as the anisotropic property of silicon are neglected.