Effects of Coaxial Through-Silicon Via on Carrier Mobility Along [100] and [110] Crystal Directions of (100) silicon

Fengjuan Wang; Ningmei Yu; Zhangming Zhu; Xiangkun Yin; Yintang Yang

doi:10.1587/elex.12.20150434

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Effects of Coaxial Through-Silicon Via on Carrier Mobility Along [100] and [110] Crystal Directions of (100) silicon

Fengjuan Wang, Ningmei Yu, Zhangming Zhu, Xiangkun Yin, Yintang Yang

著者情報

キーワード: coaxial through-silicon via (TSV), anisotropic silicon, carrier mobility, finite element analysis (FEA), keep-out-zone (KOZ)

ジャーナルフリー早期公開

論文ID: 12.20150434

DOI https://doi.org/10.1587/elex.12.20150434

この記事には本公開記事があります。

The final version of this article is now available: Vol. 12 (2015), No. 14 pp. 20150434-20150434

詳細

抄録

This letter investigates the effects of coaxial through-silicon via (TSV) on carrier motilities in the channels of nMOS and pMOS with channels along [100] and [110] orientations on (100) silicon. The keep-out zone (KOZ) induced by coaxial TSV and the effective area occupied by TSV and surrounding KOZ are evaluated. The results show that, the effective area is reduced by ~92% by aligning the channels of pMOS along [100] orientation and nMOS along [110] orientation than the opposite orientations. The absolute error ranges from -12.5μm to 7.2μm as the anisotropic property of silicon are neglected.

責任著者(Corresponding author)

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