Evaluating the single event sensitivity of dynamic comparator in 5 Gbps SerDes

Abstract

The radiation induced soft error of dynamic comparator for a 65 nm CMOS technology in 5 Gbps half-rate SerDes (serializer and deserializer) is evaluated using three-dimensional TCAD mixed-mode simulation. The sensitivity of MOSFET is simulated combined with the polarity of differential inputs and the working phases. Four types of single-event (SE) response are classified and the sensitivity grades are summarized. Our research presents that the NMOS of the cross-coupled inverter is the most sensitive.