A 529 GHz dynamic frequency divider in 130 nm InP HBT process

Abstract

This letter presents a 529 GHz 2:1 dynamic frequency divider in a 130 nm InP HBT process, which, to the best of authors’ knowledge, is the fastest frequency divider reported thus far. The presented divider is based on a novel structure to overcome bandwidth limitations of traditional dynamic frequency divider design. On-wafer measurement shows that the divider operates with the input frequency from 528.0 GHz to 529.2 GHz with bias voltage tuning, while consuming P_DC ≤ 196 mW. A driver amplifier, integrated for testing purpose, dissipates 348 mW of dc power.