IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
Thermal management of coaxial through-silicon-via (C-TSV)-based three-dimensional integrated circuit (3D IC)
Fengjuan WangNingmei Yu
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JOURNALS FREE ACCESS

2016 Volume 13 Issue 11 Pages 20151117

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Abstract

The analytical temperature model of coaxial through-silicon-via (C-TSV)-based three-dimensional integrated circuit (3D IC) is developed based on the Fourier’ law of heat transfer and energy conservation, and is verified by employing ANSYS. Based on the theoretical model, several design guidelines are concluded. From the point of thermal management, 1) TSV should be inserted with high density; 2) Cu is a better material than Al and W; 3) the 3D IC layer should be as few as possible; 4) the silicon substrate thickness should be as thin as possible; 5) the temperature-sensitive modules should be placed near TSV and heat sink.

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© 2016 by The Institute of Electronics, Information and Communication Engineers
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