A novel progressive trigger method of di/dt control for MOSFET

Abstract

A novel progressive trigger (PT) method of di/dt control for MOSFET is presented in this paper. The principle of the proposed method is based on the progressive trigger current during ON and OFF states by variable channel width for MOSFET. The experimental results show that the di/dt reduces from 105 mA/nS to 57 mA/nS for OFF state, and from 110 mA/nS to 86.7 mA/nS for ON state with R_ON = 0.5 Ω and V_gg = 3 V. The flexibility of the method is easy to implement in integrated circuits.