IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
A novel progressive trigger method of di/dt control for MOSFET
Jiangping HeBo ZhangGao PanQing Hua
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JOURNALS FREE ACCESS

2016 Volume 13 Issue 2 Pages 20151006

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Abstract

A novel progressive trigger (PT) method of di/dt control for MOSFET is presented in this paper. The principle of the proposed method is based on the progressive trigger current during ON and OFF states by variable channel width for MOSFET. The experimental results show that the di/dt reduces from 105 mA/nS to 57 mA/nS for OFF state, and from 110 mA/nS to 86.7 mA/nS for ON state with RON = 0.5 Ω and Vgg = 3 V. The flexibility of the method is easy to implement in integrated circuits.

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© 2016 by The Institute of Electronics, Information and Communication Engineers
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