IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
Ku band 2 watt TR chip for phased array based on GaAs technology
Ye YuanYong FanZhe ChenLei LiZiqiang Yang
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Keywords: switch, TR chip, GaAs
JOURNALS FREE ACCESS

2016 Volume 13 Issue 7 Pages 20160086

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Abstract

A Ku-band transceiver chip (TR chip), which can be used for the phased array system, is presented in this paper. It includes a high power amplifier (HPA), a low noise amplifier (LNA) and two switches. The transmitting chain can provide over 2 watt (W) RF output power and 14 dB gain, meanwhile the receiving chain shows less than 3 dB noise figure and 25 dB gain in the frequency range of 15 to 17.5 GHz. A novel switch based on GaAs pHEMT process is also proposed, which can handle over 2 W RF output power without sacrificing the performance of the receiving chain. The size of the TR chip is 3 mm × 3 mm.

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© 2016 by The Institute of Electronics, Information and Communication Engineers
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