IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
Collection of charge in NMOS from single event effect
Jingqiu WangFujiang LinDonglin WangWenna SongLi LiuQiwei SongLiang Chen
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JOURNALS FREE ACCESS

2016 Volume 13 Issue 8 Pages 20160014

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Abstract

In aerospace environment, single event effect (SEE) will occur and single event transient (SET) current pulse will be induced in drain/source region of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) when high energy ion strikes semiconductor devices. The typical double exponential transient current model proposed for traditional technology is not suitable for ultra deep sub-micron technology devices. In this paper, a novel multi-dimensional double exponential transient current model is proposed based on our new understanding of ultra deep sub-micron radiation mechanism, which has been validated using Technology Computer Aided Design (TCAD) simulation. This model can be important basis for the searching of SEE at circuit level and can be transparently applied to evaluate the effectiveness and performance of hardening technique, thus shortening the developing cycle of integrated circuit intended to operate within aerospace environment.

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© 2016 by The Institute of Electronics, Information and Communication Engineers
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