Nonvolatile organic field-effect transistors fabricated on Al foil substrates

Abstract

We fabricated metal-ferroelectric-metal capacitors and bottom-gate, top-contact nonvolatile ferroelectric transistors (FeFETs) using poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(3-hexylthiophene) (P3HT) on aluminum foil substrates. P(VDF-TrFE) and P3HT layers were formed by the sol-gel method at low temperature. FeFETs on Al foil substrates exhibited similar properties compared with those fabricated on other rigid and flexible substrates.