IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
Peak electric field shifting induced by avalanche injection under static avalanche in high voltage diode
Cailin WangLei Zhang
Author information
JOURNALS FREE ACCESS

2017 Volume 14 Issue 18 Pages 20170627

Details
Abstract

The peak electric field shifting far away from the pn junction and nn junction under static avalanche in high voltage diode was investigated by the device numerical simulation in this paper. An analysis of the electric field gradient analytical model was used to explain the reason of the peak electric field shifting. The results show that the peak electric field shifting is essentially induced by the avalanche generated carriers under static avalanche and occurs even at a low reverse current density level. In addition, from the borderline of peak electric field shifting, it is deduced that, with the increases of the surface doping concentration of p buffer layer and n base region doping concentration, the peak electric field shifting occurs at the higher current density.

Information related to the author
© 2017 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top