IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
An embedded gate graphene field effect transistor with natural Al oxidization dielectrics and its application to frequency doubler
Rongzhou ZengPing LiYiwen WangGang WangQingwei ZhangYongbo LiaoXiaodong Xie
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JOURNALS FREE ACCESS

2017 Volume 14 Issue 20 Pages 20170707

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Abstract

A high efficiency frequency doubler is realized based on a single embedded gate (EG) graphene field effect transistor (GFET) with natural Al oxidation dielectrics. Due to elimination of the step of depositing gate dielectrics, the fabrication process of the EG-GFET is improved compared to conventional EG-GFETs. The capacitive efficiency of the EG-GFET is improved up to 80 times compared to the conventional silicon back gate (BG) GFET with 300 nm thick SiO2, which is higher than that of most conventional EG-GFETs. Thanks to the high capacitive efficiency, the conversion gain of the frequency doubler is 14 times higher than that of the BG-GFET based frequency doubler.

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© 2017 by The Institute of Electronics, Information and Communication Engineers
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