Equivalent circuit model of through-silicon-via in slow wave mode

抄録

The equivalent circuit of signal-ground through-silicon-via (GS-TSV) in slow wave region is developed based on the microwave theory, and is verified by employing ANSYS HFSS. The ADS results of the equivalent circuit of GS-TSV consistent well with the HFSS simulation data. The results of slow-wave equivalent circuit are more accurate than those of widely used quasi-transverse electric and magnetic (TEM) equivalent circuit in slow wave region.