A class E GaN microwave power amplifier accounting for parasitic inductance of transistor

抄録

The effects of parasitic inductance of transistor on finite dc-feed inductance type class E microwave power amplifier is analyzed in this letter. We find that the frequency bandwidth can be improved by fully consideration of the output parasitic inductance of transistor. To validate the method, a GaN power amplifier by using the proposed topology is designed for demonstration purpose. Experimental results show that the amplifier is realized from 2.5 GHz to 3.5 GHz (33.3%) with measured drain efficiency larger than 60%, which show good agreement with the simulated results.