Characterization of oxide trap density with the charge pumping technique in dual-layer gate oxide

抄録

In this paper, the simple multi-frequency charge pumping (CP) technique in conjunction with the tunneling model of trapped charges shows for profiling of the near-interface oxide traps in gate metal/high-k dielectric/SiO2 interfacial layer stack structure. The methodological basis and the accurate model are introduced for analysis of measured multi-frequency CP data in dual-layer gate oxide. The whole models are derived from the fundamental physics and simplified method is introduced for extraction of the trap profile in the stacked gate dielectric from multi-frequency CP curves.