2017 Volume 14 Issue 9 Pages 20170350
This paper presents a compact Ka-band TDD front-end chip with temperature compensation technology. The front-end chip is integrated with a passive switch, a low noise amplifier (LNA) and a power amplifier (PA). Temperature compensation bias network is used to reduce the gain ripple versus temperature, and co-design method between the amplifiers and the switch is used to enhance the bandwidth. The gain ripple is less than ±0.7 dB when the temperature ranges from −55°C to +85°C. The circuit works from 30.5 GHz∼39.1 GHz, with a 24.7% relative bandwidth. The chip is fabricated with GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. The gain of the receiver (RX) link is 26.6 dB, and the noise figure of it is 2.95 dB at 36.5 GHz. The gain of the transmitter (TX) link is 26.0 dB, and the output 1 dB compression point of it is 16 dBm.