2018 Volume 15 Issue 11 Pages 20180421
An effective method of improving signal integrity of through-silicon-via (TSV) is proposed by adding a PN junction around conventional TSV. And the equivalent electrical model of the TSV with PN junction is proposed, based on which the S-parameters are obtained by ADS software and compared those of conventional TSV. It is shown that the TSV with PN junction offers more superior signal integrity than conventional TSV. Meanwhile, the S-parameters are validated by employing HFSS, and the results from ADS and HFSS show well agreements. Finally, a feasible fabrication process is given.
