IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Design and realization of low-cost 10 W power amplifier module at 7.9–8.4 GHz
Chi-Hyung AhnYounghoon KimSungwon OhYeonjun NohDong-Ho LeeSanghun LeeKunhee ChoJusung Kim
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2018 Volume 15 Issue 19 Pages 20180775

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Abstract

This letter describes the design and realization of the low-cost power amplifier module with operation frequency at 7.9–8.4 GHz. Realized power amplifier module employing fully internally matched GaN HEMT power amplifier exhibits 10 W output power and associated gain of 50.1 dB at X-band frequency for satellite communications. The module exhibits the 20% of power added efficiency (PAE), whereas the main power amplifier with internally matched HEMT device achieves 29.3% of PAE. 3rd order intermodulation level is less than −35 dBc with 7 dB output power back-off condition. Proposed housing method of the power amplifier module reduces the thermal distribution by more than 30°C.

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© 2018 by The Institute of Electronics, Information and Communication Engineers
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