2018 Volume 15 Issue 19 Pages 20180775
This letter describes the design and realization of the low-cost power amplifier module with operation frequency at 7.9–8.4 GHz. Realized power amplifier module employing fully internally matched GaN HEMT power amplifier exhibits 10 W output power and associated gain of 50.1 dB at X-band frequency for satellite communications. The module exhibits the 20% of power added efficiency (PAE), whereas the main power amplifier with internally matched HEMT device achieves 29.3% of PAE. 3rd order intermodulation level is less than −35 dBc with 7 dB output power back-off condition. Proposed housing method of the power amplifier module reduces the thermal distribution by more than 30°C.
