2018 Volume 15 Issue 2 Pages 20171019
An ultra-wideband low noise amplifier (LNA) is presented in 65 nm CMOS. In order to obtain ultra-wide bandwidth, a compact inter-stage network utilizing one transformer and a de-Q-ing resistor is presented. The proposed LNA achieves maximum power gain of 18.21 dB over an ultra-wideband of 1–13 GHz, the measured minimum noise figure (NF) of 5.28 dB and an input 1-dB compression point (IP1dB) of −21.43 dBm. The implemented LNA occupies 0.52 mm2 of the active area excluding pads, and it draws 14.92 mW from 1.2 V power supply.