IEICE Electronics Express
Online ISSN : 1349-2543
1–30 GHz ultra-wideband low noise amplifier with on-chip temperature-compensation circuit
Lin YangLin-An YangTaotao RongZhi JinYue Hao
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2018 Volume 15 Issue 20 Pages 20180804


A 1–30 GHz ultra-wideband low noise amplifier (LNA) MMIC with a simplified on-chip temperature-compensation circuit is presented in this paper. The temperature-compensation circuit composed of two GaAs mesa resistors and two Nickel Chromium (Ni/Cr) thin-film resistors is able to compensate the variation of temperature accurately over a wide operating frequency range. The fabricated LNA has demonstrated the improvement of gain variation from 3.4 to 0.8 dB (0.4 dB/Stage) in the temperature range from −55 °C to +125 °C. It exhibits the lowest the gain variation (0.0022 dB/°C/Stage) with temperature ever reported for the ultra-wideband LNA. By contrasting the LNA with and without the temperature-compensation circuit, it is also found that the use of the temperature-compensation circuit neither degrades other aspects of the circuit performance nor increases the area of the original amplifier chip.

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© 2018 by The Institute of Electronics, Information and Communication Engineers
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