2018 Volume 15 Issue 23 Pages 20180868
We used ab initio calculations to clarify the atomistic origin of memory state switching in SiN based ReRAMs. The results of our calculations indicate that a N vacancy with a H atom acts as the high resistance state (HRS) and a N vacancy without a H atom is low resistive state (LRS). Moreover, we find that HRS and LRS can be switched by charge injection and removal. These results indicate that having N vacancies in the SiN layer can enable SiN based ReRAMs with high program/erace cycle endurance.