Atomistic Study of SiN based ReRAM with High Program/Erase Cycle Endurance

Abstract

We used ab initio calculations to clarify the atomistic origin of memory state switching in SiN based ReRAMs. The results of our calculations indicate that a N vacancy with a H atom acts as the high resistance state (HRS) and a N vacancy without a H atom is low resistive state (LRS). Moreover, we find that HRS and LRS can be switched by charge injection and removal. These results indicate that having N vacancies in the SiN layer can enable SiN based ReRAMs with high program/erace cycle endurance.