IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
An experimental study on estimating dynamic junction temperature of SiC MOSFET
Shuhei FukunagaTsuyoshi Funaki
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2018 Volume 15 Issue 8 Pages 20180251


Thermal characterization and modeling of power module is inevitable to take full advantages of power semiconductor device. Dynamic thermal modeling of power module, which is related to packaging structure and material property, is attracted attention for power electronics system design. The transient thermal resistance measurement standard, called static test method (JESD51-14 [1]), utilizes temperature dependency in IV characteristics of power semiconductor device to estimate junction temperature. The dynamic gate threshold voltage shift of SiC MOSFET violates junction temperature estimation. This paper proposes accurate transient junction temperature estimation procedure for SiC MOSFET with advancing the static test method, and validates the temperature estimation with temperature sense diode embedded in SiC MOSFET. The proposed procedure enables to get accurate time response of TJ for SiC MOSFET, which enables dynamic thermal modeling of power module with SiC MOSFET.

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© 2018 by The Institute of Electronics, Information and Communication Engineers
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