IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process
Yuki YamashitaSteve StoffelsNiels PosthumaKaren GeensXiangdong LiJun FurutaStefaan DecoutereKazutoshi Kobayashi
Author information

2019 Volume 16 Issue 22 Pages 20190516


Reducing parasitic coupling components can improve switching performance in electric circuits. A two-stage gate driver and power Gallium Nitride High Electron Mobility Transistors (GaN HEMT) were monolithically integrated for MHz-switching. The monolithic integration improves switching performance owing to minimized parasitic inductance. The proposed GaN-IC was fabricated using an enhancement-mode GaN-on-Insulator process technology. Experimental results showed that the GaN-IC had faster transition and less energy loss than a conventional circuit using a discrete gate driver. The proposed GaN-IC reduced switching time by 86% at turn-off and by 45% at turn-on under off-state VDS of 100 V and on-state ID of 10 A.

Information related to the author
© 2019 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article