IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process
Yuki YamashitaSteve StoffelsNiels PosthumaKaren GeensXiangdong LiJun FurutaStefaan DecoutereKazutoshi Kobayashi
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2019 Volume 16 Issue 22 Pages 20190516


Reducing parasitic coupling components can improve switching performance in electric circuits. A two-stage gate driver and power Gallium Nitride High Electron Mobility Transistors (GaN HEMT) were monolithically integrated for MHz-switching. The monolithic integration improves switching performance owing to minimized parasitic inductance. The proposed GaN-IC was fabricated using an enhancement-mode GaN-on-Insulator process technology. Experimental results showed that the GaN-IC had faster transition and less energy loss than a conventional circuit using a discrete gate driver. The proposed GaN-IC reduced switching time by 86% at turn-off and by 45% at turn-on under off-state VDS of 100 V and on-state ID of 10 A.

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© 2019 by The Institute of Electronics, Information and Communication Engineers
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