2019 年 16 巻 23 号 p. 20190657
To minimize the characteristic variation of SPADs (Single-Photon Avalanche Photo Diodes) with bias, a current mirror based quenching bias circuit is implemented and tested for Single Photon Detection. With the proposed quenching bias circuit, the operational bias variation of SPADs is successfully reduced. A SPAD and quenching bias circuit are integrated in a 43 µm × 43 µm area to make a micro pixel. The optimized bias circuit maximizes the photon detection area to have more than 50% fill factor. This paper is based on a 0.18 µm standard CMOS process with thick gate oxide option.
