A novel three-dimensional NAND flash structure for improving the erase performance

Abstract

In this paper, the Indium Gallium Zinc Oxide (IGZO)-Oxide-P-filler (IOP) structure is proposed to improve the poor erase performance of three-dimensional (3D) NAND flash structures using IGZO channel. First, the erase performance of the polysilicon channel and the IGZO channel of the 3D NAND flash structure were compared. During this simulation, the IGZO channel displayed a low 0.06 V erase performance. To solve this problem, the proposed IOP structure was able to produce a memory window of 5.29 V. Based on these results, we confirmed that the IOP structure can greatly improve erase performance, which is the largest obstacle in using the IGZO channel.