2022 Volume 19 Issue 23 Pages 20220458
An ultra-wideband low noise amplifier (LNA) is designed based on a uniform distributed topology using 0.25µm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. In order to increase the amplifier’s high frequency gain and gain flatness and consequently widen its bandwidth, the design proposed a new multi-inductor matching technique based on cascode structure. According to the actual measurement, the circuit adopts a +5V power supply, and the current is about 86mA. The bandwidth coverage is 2-18GHz, the noise figure is less than 3.5dB, the power gain is greater than 18dB, and the gain flatness is ±1dB, which has excellent input and output standing waves, and the saturated output power is greater than 17dBm, and the chip area is 3.1mm*1.3mm.
