抄録
In this paper, new simple circuit models for developed SiC pin diodes are proposed. They are based on the electrical characteristics obtained in experiments without any detail information of internal structure and physical parameters. The validity of the circuit models is confirmed by correspondence between simulated characteristics and experimental one. The model installed in the experimental circuit configuration can precisely simulate the waveforms of the reverse recovery current and the forward characteristics. As a result, the proposed model is shown to be appropriate for describing the characteristics of high capability SiC diode module in the circuit operation.
