A low temperature coefficient wide temperature range bandgap reference with high power supply rejection

抄録

This paper presents a low temperature coefficient and wide temperature range bandgap reference with high power supply rejection. High temperature curvature compensation of this circuit is accomplished by MOSFET transistors operating in the subthreshold region. With the proposed piecewise compensation technique, the temperature range is extended. At the same time, a pre-regulator structure is adopted to improve the line sensitivity and suppress the ripple of the power supply. The novel bandgap reference is proposed and verified in 180nm CMOS process. The measured V_REF is 1.18V at 3.3V power supply voltage, and the static current of the circuit is 75uA. Over the wide temperature range of -60∼160°C, the temperature coefficient achieves 5.72ppm/°C, and the power supply rejection is -93.26dB at low frequency.