IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
A new extraction method of GaN switch-HEMT small-signal model with capacitance scanning algorithm
Jiashun LangBeibei LvDi ZhangYu LiuPengFei ZhangJiongjiong MoZhiyu WangHua ChenFaxin Yu
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2024 Volume 21 Issue 17 Pages 20240348

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Abstract

In this letter, a new extraction method of GaN switch-HEMT small-signal model with capacitance scanning algorithm is proposed. In the algorithm, the proportional relationship among intrinsic Cgs, Cgd and parasitic Cg is scanned based on a simplified small-signal model without any approximations for capacitance. Comparing with the measured S parameters, optimized model parameters with the minimum error, especially the parasitic Cg, are achieved without assistance of extra methods such as EM analysis. Using this method, the accurate small-signal model for a 0.25µm gate-length GaN switch-HEMT up to 26.5GHz is extracted. This convenient method can be used for both GaN and GaAs switch-HEMT.

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© 2024 by The Institute of Electronics, Information and Communication Engineers
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