A snapback-free and low-loss reverse conducting LIGBT with integrated multi-functional trench gates

抄録

A Snapback-Free and Low-Loss Reverse Conducting LIGBT with Integrated Multi-functional Trench Gates (MTG-LIGBT) is a device that eliminates the snapback phenomenon of the SA-LIGBT and offers a low loss which realized by its multi-functional trench gates as demonstrated by the TCAD SENTAURUS. Two trench gates and a planar gate together form a FIN-NMOS, which significantly reduces turn-off loss E_OFF. Due to the presence of the multi-functional trench gate, the P-type substrate of FIN-NMOS can be lightly doped. And then reverse conduction can be achieved through punchthrough. Consequently, The MTG-LIGBT achieve a snapback-free state and own a superior trade-off relationship between V_ON and E_OFF.