IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
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A low power BJT-based CMOS temperature sensor using dynamic-distributing-bias circuit
Shichong ZhaiWenchang LiTianyi ZhangJian Liu
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2024 Volume 21 Issue 4 Pages 20230500

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Abstract

A low power dynamic-distributing-bias CMOS temperature sensor is presented for temperature-sensing RFID tag. To reduce the chip area and power consumption, we propose a new hybrid PTAT/REF current generator. A new current-mode readout scheme is devised, which is dedicated to improve the dynamic range utilization of ADC and further reduce the power consumption. Fabricated in 0.153µm CMOS process, the sensor shows a measured inaccuracy of -0.6°C to +0.8°C from -40°C to 125°C. This performance is obtained by using precision and nonlinearity compensation techniques such as VBE trimming, ratio-metric curvature correction, chopping and dynamic element matching (DEM). The sensor has low power consumption of 2.21µW under a 1.6V supply and occupies an area of 0.07mm2.

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© 2024 by The Institute of Electronics, Information and Communication Engineers
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