A dual band 0.9-dB-loss 40-dB-isolation switch for 5G new radio in 40 nm CMOS

Abstract

This paper proposes a dual-band RF switch in 40 nm CMOS with low insertion loss and high isolation for 5G millimeter wave. Body floating technology and transistor custom layout are adopted to reduce the insertion loss of the switch. Parallel resonant network and shunt-to-ground transistor are adopted to improve the isolation performance of the switch. By switching the inductor of the resonator to adjust the switch frequency band, the bandwidth of the switch is improved. The measured results show that the insertion loss in 22 GHz~45 GHz band is less than 1.6 dB, and that in 28 GHz is 0.9 dB. The isolation of 28 GHz and 39 GHz is 40 dB and 51 dB, respectively, and the isolation of the entire frequency band is greater than 25 dB. The return loss below 40 GHz is less than 10 dB, the chip size of the dual-band switch is 0.3×0.4 mm², and the core area is 0.05×0.1 mm².