Comparison of switching characteristics of 650 V power devices using a double pulse circuit

Abstract

Theswitching characteristics of four 650 V power devices were compared: (1) Cascode GaN-FET, (2) SiC-MOSFET, (3) Si-SJ-MOSFET, and (4) Si-RC-IGBT. Using double pulse tests, the characteristics of two configurations ((a) Schottky Barrier Diode/Transistor (Tr), (b) Tr/Tr) were evaluated. In both configurations, the Cascode GaN-FET had the smallest switching loss, less than half that of the other devices. The SiC-MOSFET had a smaller transconductance than the other devices, and the turn-on loss in configuration (a) was slightly larger than those of the Si devices. In configuration (b), the turn-on losses of the two Si devices were significantly larger than those in (a) due to the recovery current of the internal diodes of the transistors.