A 1.2-V compact bandgap reference with curvature compensation technology

Abstract

A low-area and low-temperature-coefficient (TC) bandgap reference (BGR) circuit using curvature compensation technology is presented. Comparing with traditional BGR with multiple BJT, four MOSFETs biased in their weak-inversion regions can produce a proportional-to-absolute-temperature (PTAT) voltage without consuming a great active area. In addition, a curvature compensation circuit was adopted to reduce the drift of temperature. The proposed BGR circuit has been implemented using a 0.18 um technology, occupying an area of 0.01 mm². Simulation results demonstrate that the BGR achieves average TC of 7.86 ppm/°C from -40°C to 125°C at 3.3 V and the line regulation (LR) of 0.048%/V between 2.7 and 3.6V supply voltage, respectively.