抄録
A compact but accurate HSPICE macromodel for single-bit resistive RAM (ReRAM) is proposed in this paper. This compact macromodel uses the minimum number of circuit elements to improve the HSPICE simulation speed. And, the macromodel is verified to show very good agreement with the measurements due to voltage-controlled resistors used as the SET and RESET resistors in the macromodel describing well the complicated current-voltage relationship of the ReRAM. An extended version of the macromodel is also proposed and verified for multi-bit ReRAM, where its SET resistance and RESET voltage can vary according to the SET pulse width applied to the ReRAM.
