IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
Ultra-low voltage high-speed Schmitt trigger circuit in SOI MOSFET technology
Kyung Ki KimYong-Bin Kim
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2007 Volume 4 Issue 19 Pages 606-611

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Abstract

This paper proposes a novel ultra-low voltage and high speed Schmitt trigger circuit designed in silicon-on-insulator (SOI) technology. The proposed circuit is designed using dynamic threshold MOS (DTMOS) technique and multi-threshold voltage CMOS (MT-CMOS) technique to reduce power consumption and accomplish high speed operation. The experiment shows the proposed Schmitt trigger circuit consumes 4.68µW at 0.7V power supply voltage and the circuit demonstrates the maximum switching speed of 170psec.

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© 2007 by The Institute of Electronics, Information and Communication Engineers
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