抄録
We demonstrate high-performance InGaAsP based multiple-quantum-well (MQW) lasers fabricated by low-energy ion implantation induced quantum well intermixing (QWI) technique. Different doses of implantation were used to vary the wavelength shift for MQW lasers from the QWI process. At room temperature, the QWI lasers have continuous-wave (CW) characteristics of 10.4-mA threshold current and 13.8-mW maximal output power, which are comparable to the performance of the lasers made of the same as-grown MQW materials. The QWI lasers have a characteristic temperature as high as 58.4K, which verifies that the material quality after intermixing is feasible for fabricating practical devices.
