抄録
The design and physical implementation of a low-power SRAM with 4T CMOS latch bit-cell is presented. The memory cells in this work are composed of two cross-coupled inverters without any access transistors. They are accessed by totally novel read and write methods that result in low operating power dissipation in the nature. A 1.8V SRAM test chip has been fabricated in a 0.18µm CMOS technology, which demonstrated the functionality of the memory cell. This new SRAM operates with 30% reduction in read power and 42% reduction in write power compared to the standard 6T SRAM.
