抄録
We propose a behavioral model of unipolar resistive RAMs (ReRAMs). The model integrates three behavioral characteristics of unipolar ReRAMs; i.e., i) ON/OFF resistive switching characteristics for transient voltage pulses, ii) I-V characteristics exhibiting ON/OFF resistive switching with current compliance, and iii) current-compliance dependence of both ON resistance and OFF threshold currents. The model is described by three nonlinear differential equations with several static functions, which enables us to employ the model in any numerical or circuit simulator. As an example, we integrate the model on HSPICE, and show the simulated results using experimental parameters extracted from fabricated ReRAMs of TiO2 thin films.
