2010 Volume 7 Issue 19 Pages 1499-1503
We investigated the source-to-drain capacitance (Csd) due to DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channel SNW devices operating at high drain voltages have the positive value of Csd by DIBL effect. On the other hand, junctionless SNW MOSFETs without source/drain (S/D) PN junctions have negative or zero values by small DIBL effect. By considering the additional source-to-drain capacitance component, the accuracy of a small-signal model was significantly improved on the imaginary part of Y22-parameter.