IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs
Seongjae ChoIn Man KangKyung Rok Kim
Author information
JOURNALS FREE ACCESS

2010 Volume 7 Issue 19 Pages 1499-1503

Details
Abstract

We investigated the source-to-drain capacitance (Csd) due to DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channel SNW devices operating at high drain voltages have the positive value of Csd by DIBL effect. On the other hand, junctionless SNW MOSFETs without source/drain (S/D) PN junctions have negative or zero values by small DIBL effect. By considering the additional source-to-drain capacitance component, the accuracy of a small-signal model was significantly improved on the imaginary part of Y22-parameter.

Information related to the author
© 2010 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top