IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
Analysis of the electrical characteristics of SCR-based ESD Protection Device (PTSCR) in 0.13/0.18/0.35um process technology
Yong-Seo Koo
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2011 Volume 8 Issue 1 Pages 8-12


In this paper, an experimental analysis of the electrical characteristics of the PTSCR was conducted. The PTSCR contains a high trigger current and a holding voltage that enables latch-up immune during normal operation. The PTSCR in each process technology is verified by the TLP system as well as a hot chuck controller. The experimental results show that the trigger current and holding voltage are higher than that of other SCR devices. At higher temperatures, the holding voltage of the PTSCR decreased due to the operation mechanism of the SCR, while the trigger current increased due to the MOSFET trigger mechanism.

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© 2011 by The Institute of Electronics, Information and Communication Engineers
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