2011 Volume 8 Issue 16 Pages 1309-1314
In this paper, a post-breakdown resistance value of antifuse cells has been calculated with respect to breakdown spots. Also, the effect of body doping concentration and source/drain abruptness on the post-breakdown resistance has been observed in the case of gate underlap and overlap structures. Based on simulation results, we have proposed some ways of making the post-breakdown resistance distribution uniform.