抄録
This paper describes a novel high-precision bandgap reference with resistance variation compensated. Novel process-compensated emitter current generator allows a substantial reduction on VBE variation, resulting in an improved accuracy of the proposed bandgap reference. Comparison results in a 0.13µm CMOS technology indicated that the proposed voltage reference achieved up to 62% improvement in terms of accuracy, as compared to conventional bandgap reference. Process variation of reference voltage is shown to be ±3.67mV for all process corners without any post-process trimming.
