G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems

Hossein Aghababa; Behzad Ebrahimi; Mehdi Saremi; Vahid Moalemi; Behjat Forouzandeh

doi:10.1587/elex.9.881

Hossein Aghababa, Behzad Ebrahimi, Mehdi Saremi, Vahid Moalemi, Behjat Forouzandeh

著者情報

キーワード: G4-FET, adaptive neuro-fuzzy training systems, semiconductor industry, circuit simulation, HSPICE model

ジャーナルフリー

2012 年 9 巻 10 号 p. 881-887

DOI https://doi.org/10.1587/elex.9.881

詳細

抄録

G4-FET has attracted attention as an emerging device for the future generations of semiconductor industry. This paper is intended to propose a model representing the characteristics of G4-FET device in order to perform circuit simulations. The modeling approach is established upon the neuro-fuzzy technique whose main strength is that they are universal approximators with the ability to solicit interpretable IF-THEN rules. The accuracy of the proposed model is verified by HSPICE circuit simulations.

責任著者(Corresponding author)

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